053-4226 rev c 11-2008 product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times ? soft recovery characteristics ? popular to-220 package ? low forward voltage ? low leakage current ? avalanche energy rated product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters -inverters ? snubber diode ? pfc ultrafast soft recovery rectifier diode 1000v 15a APT15DQ100K APT15DQ100Kg* *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings: t c = 25c unless otherwise speci? ed. static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 2.5 3.0 3.06 1.92 100 500 12 characteristic / test conditions forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 15a i f = 30a i f = 15a, t j = 125c v r = 1000v v r = 1000v, t j = 125c characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 126c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh) operating and storagetemperature range lead temperature for 10 sec. symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg t l unit volts amps mj c APT15DQ100K(g) 1000 15 29 80 20 -55 to 175 300 1 - cathode 2 - anode back of case - cathode 1 2 microsemi website - http://www.microsemi.com
min typ max - 20 - 235 - 185 - 3 - - 300 - 810 - 6 - - 125 - 1150 - 19 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 15a, di f /dt = -200a/ s v r = 667v, t c = 25 c i f = 15a, di f /dt = -200a/ s v r = 667v, t c = 125 c i f = 15a, di f /dt = -1000a/ s v r = 667v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c APT15DQ100K(g) dynamic characteristics 053-4226 rev c 11-2008 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.20 1.00 0.80 0.60 0.40 0.20 0 0.5 single pulse 0.1 0.3 0.7 0.05 figure 1b, transient thermal impedance model peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: thermal and mechanical characteristics characteristic / test conditions junction-to-case thermal resistance package weight maximum mounting torque symbol r jc w t torque min typ max 1.18 0.07 1.9 10 1.1 unit c/w oz g lb?in n?m d = 0.9 microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 0.676 0.504 0.00147 0.0440 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext
053-4226 rev c 11-2008 APT15DQ100K(g) typical performance curves t j = 125 c v r = 667v 7.5a 15a 30a t rr q rr q rr t rr i rrm 400 350 300 250 200 150 100 50 0 25 20 15 10 5 0 duty cycle = 0.5 t j = 175 c 35 30 25 20 15 10 5 0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 80 70 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetempera ture v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage 45 40 35 30 25 20 15 10 5 0 2000 1800 1600 1400 1200 1000 800 600 400 200 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of chan ge -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of cha nge q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 125 c v r = 667v t j = 175 c t j = -55 c t j = 25 c t j = 125 c 0 1 2 3 4 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = 125 c v r = 667v 30a 7.5a 15a 30a 15a 7.5a 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200
APT15DQ100K(g) 053-4226 rev c 11-2008 apt10035lll 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 9. diode test circuit figure 10, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform to-220 (k) package outline e3 100% sn dimensions in millimeters and (inches) microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved.
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